氧化钽(V)

Tantalum (V) oxide (Ta2O5) has potential applications as part of an environmental barrier coating system for Si3N4-based turbine components. Octadecyl phosphoric acid ester has been found to produce oriented, well-ordered monolayers on a flat tantalum (V) oxide surface, via self-assembly from a heptane/propan-2-ol solution. Tantalum(V) oxide (Ta 2 O 5 ) has been used extensively as an insulating layer in discrete capacitors and shows a high potential for semiconductor applications such as an insulating dielectric in the capacitive element in memory devices such as dynamic random access.

For vacuum deposition

MFCD00011254

215-238-2

Ta₂O₅

441.89

1800°

8.2

Ambient temperatures.

3-12mm Sintered Lump

Insoluble in water.

14,9056

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